http://www.ncepower.com wuxi nce power semiconductor co., ltd page 1 v1.0 NCE15GD135P pb free product NCE15GD135P 1350v, 15a, trench npt igbt features z trench npt( non punch through) igbt z high speed switching z low saturation voltage: v ce(sat) =2.0v@i c =15a z high input impedance applications z inductive heating, microwav e oven, inverter, ups, etc. z soft switching applications general description using advanced trench npt technology, nce?s 1350v igbts offers superior conducti on and switching performances, and easy parallel operation with exceptional avalanche rugged- ness. this device is designed fo r soft switching applications. absolute maximum ratings notes: 1. repetitive rating, pulse width lim ited by max. junction temperature symbol description ratings units v ces collector to emitter voltage 1350 v v ges gate to emitter voltage +/-30 v continuous collector current @t c =25c 30 a i c continuous collector current @t c =100c 15 a i cm (1) pulsed collector current 45 a i f diode continuous forward current @t c =100c 15 i fm diode maximum forward current 90 a maximum power dissipation @t c =25c 220 w p d maximum power dissipation @t c =100c 88 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8" from case for 5seconds 300 c
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 2 v1.0 NCE15GD135P pb free product thermal characteristics symbol parameter typ. max. units r jc thermal resistance, junction to case - 0.57 c/w r ja thermal resistance, junction to ambient - 40 c/w electrical characteristics of the igbt t c =25 c symbol parameter test conditions min. typ. max. units off characteristics bv ces collector to emitter breakdown voltage v ge =0v, ic=1ma 1350 - - v i ces collector cut-off current v ce = v ces , v ge =0v - - 1 ma i ges g-e leakage current v ge = v ges , v ce =0v - - +/-250 na on characteristics v ge(th) g-e threshold voltage i c =15ma, v ce =v ge 4.0 5.5 7.0 v i c =15a, v ge =15v t c =25c - 2 2.5 v v ce(sat) collector to emitter saturation voltage i c =15a, v ge =15v t c =125c - 2.15 - v dynamic characteristics c ies input capacitance - 2350 - pf c oes output capacitance - 70 - pf c res reverse transfer capacitance v ce =30v, v ge =0v, f=1mhz - 45 - pf switching characteristics t d(on) turn-on delay time - 33 - ns t r rise time - 80 - ns t d(off) turn-off delay time - 160 - ns t f fall time - 255 330 ns e on turn-on switching loss - 0.3 - mj e off turn-off switching loss - 0.58 0.74 mj e ts total switching loss v cc =600v,i c =15a, r g =10 ? ,v ge =15v, resistive load, t c =25c - 0.88 - mj t d(on) turn-on delay time - 30 - ns t r rise time - 115 - ns t d(off) turn-off delay time - 170 - ns t f fall time - 390 - ns e on turn-on switching loss - 0.38 - mj e off turn-off switching loss - 0.89 - mj e ts total switching loss v cc =600v,i c =15a, r g =10 ? ,v ge =15v, resistive load, t c =125c - 1.27 - mj q g total gate charge - 100 - nc q ge gate to emitter charge - 19 - nc q gc gate to collector charge v cc =600v,i c =15a, v ge =15v - 45 - nc
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 3 v1.0 NCE15GD135P pb free product electrical characteristics of diode t c =25 c symbol parameter test conditions min. typ. max. units 25c 1.4 1.8 v v fm diode forward voltage i f =15a 125c 1.42 v 25c 575 ns t rr diode reverse recovery time 125c 577 ns 25c 30 a i rr diode peak reverse recovery current 125c 37 a 25c 8.7 uc q rr diode reverse recovery charge i f =15a, di/dt=200a/us 125c 10.7 uc
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 4 v1.0 NCE15GD135P pb free product typical performance characteristics figure 1. typical output characteristics figure 2. typical saturation voltage characteristics figure 3. saturation voltage vs. case figure 4. saturation voltage vs. v ge temperature at variant current level figure 5. saturation voltage vs. v ge figure 6. capacitance characteristics collector current, i c (a) collector emitter voltage, v ce (v) collector emitter voltage, v ce (v) collector current i c, (a) collector emitter voltage, vce(v) case temperature, tc(c) collector emitter voltage, vce(v) gate emitter voltage, v ge ( v) gate emitter voltage, v ge ( v) collector emitter voltage, vce (v) ca p acitance (p f ) collector emitter voltage, v ce (v)
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 5 v1.0 NCE15GD135P pb free product typical performance characteristics (continued) figure 7. turn-on characteristics vs. gate figure 8. turn-off characteristics vs. gate resistance resistance figure 9. switching loss vs. gate resistance figure 10. turn-on characteristics vs. collector current figure 11. turn-off characteristics vs. figure 12. switching loss vs. collector current collector current gate resistance, r g ( ? ) switchin g time ( ns ) switchin g time ( ns ) gate resistance, r g ( ? ) gate resistance, r g ( ? ) switchin g loss ( mj ) switchin g loss ( mj ) switchin g loss ( mj ) collector current, i c (a) collector current, i c (a) switchin g loss ( mj ) collector current, i c (a)
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 6 v1.0 NCE15GD135P pb free product typical performance characteristics (continued) figure13. gate charge characteristics figure 14. soa characteristics figure 15. turn-off soa figure 16. transient thermal impedance of igbt gate-emitter volta g e ( v ) gate charge, qg (nc) collector current, i c (a) collector emitter voltage, (v) collector current, i c (a) collector emitter voltage, (v)
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 7 v1.0 NCE15GD135P pb free product to-3p mechanical dimensions
http://www.ncepower.com wuxi nce power semiconductor co., ltd page 8 v1.0 NCE15GD135P pb free product attention: any and all nce products described or contained herein do not have specifications that c an handle applications that require extremely high levels of reliability, such as life-support sy stems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your nce representative nearest yo u before using any nce products descr ibed or contained herein in such applications. nce assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, oper ating condition ranges, or other parameters) listed in products specifications of any and all nce products described or contained herein. specifications of any and all nce pr oducts described or contained herein sti pulate the performance, characteristics, and functions of the described products in the independent state, and ar e not guarantees of the performance, characteristics, and functions of the described products as mounted in the cu stomer?s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mount ed in the customer?s products or equipment. nce power semiconductor co.,ltd. st rives to supply high-qualit y high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could enda nger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equi pment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all nce products(including technical data, servic es) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorit ies concerned in accordance with the above law. no part of this publication may be reproduced or transmi tted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information st orage or retrieval system, or otherwise, without the prior written permission of nce po wer semiconductor co.,ltd. information (including circuit diagrams and circuit param eters) herein is for example only ; it is not guaranteed for volume production. nce believes information herein is accu rate and reliable, but no guaran tees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, et c. when designing equipment, refer to t he "delivery specification" for the nce product that you intend to use. this catalog provides information as of mar. 2010. specifications and info rmation herein are subject to change without notice.
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